| PART |
Description |
Maker |
| MRF5S19100HSR3 MRF5S19100HD MRF5S19100HR3 |
1990 MHz, 22 W Avg., 28 V, 2 x N–CDMA Lateral N–Channel RF Power MOSFET
The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| MRF9030MBR1 MRF9030MR1 MRF9030M |
MRF9030MR1, MRF9030MBR1 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs
The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
| MRF18030BR3 MRF18030BSR3 MRF1803BR3 MRF1803BSR3 MR |
MRF18030BR3, MRF18030BSR3 GSM/GSM EDGE 1.93 - 1.99 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs
THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS
|
Motorola, Inc
|
| MRF5P21240R6 MRF5P21240 |
RF POWER FIELD EFFECT TRANSISTOR 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF5P21240R6 2170 MHz, 52 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET
2170 MHz, 52 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Freescale (Motorola)
|
| A2T21H140-24SR3 |
N--Channel Enhancement--Mode Lateral MOSFET
|
NXP Semiconductors
|
| LP0701N3-GP003 LP0701N3-GP002 |
P-Channel Enhancement-Mode Lateral MOSFET
|
Supertex, Inc
|
| A2T21S160-12S A2T21S160-12SR3 |
N--Channel Enhancement--Mode Lateral MOSFET
|
NXP Semiconductors
|
| A2T21S161W12S A2T21S161W12SR3 |
N--Channel Enhancement--Mode Lateral MOSFET
|
NXP Semiconductors
|
| AFT09S220-02N AFT09S220-02NR3 |
N-Channel Enhancement-Mode Lateral MOSFET
|
NXP Semiconductors
|
| A2T20H330W24NR6 |
N--Channel Enhancement--Mode Lateral MOSFET
|
NXP Semiconductors
|
| PD27025F |
25 W, 2.5GHz - 2.7GHz , N-Channel E-Mode, Lateral MOSFET
|
PEAK electronics GmbH
|
| PD27025F |
25 W, 2.5GHz - 2.7GHz , N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
